All-Polymer Organic Field-Effect Transistors with Memory Element

摘要

We introduce an hole-accepting layer on a poly(methyl methacrylate) (PMMA) dielectric to investigate the reversible threshold voltage (Vth) shifts in all-polymer nchannel organic field-effect transistor (OFET) using an organic semiconductor of an poly{[N,N''-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5''-(2,2''-bithiophene)} (P(NDI2OD-T2)). Top drain-source with a bottom-gate contact structure device exhibited a unipolar property with n-channel behavior. Furthermore, the existence of poly(3-hexylthiophene) (P3HT) films as a hole-accepting-like storage layers resulted in a reversible Vth shifts upon the application of external gate bias (Vbias). Hence, all-polymer organic transistor with the hole-accepting layer exhibited a large memory window (?Vth = 10.7 V) for write and erase electrically without major degradation in saturation mobility (μsat = 1.8~2.8×10-4 cm2 V-1 s-1).