Body-tied double-gate SONOS flash (omega flash) memory device built on bulk Si wafer

机译：基于块状Si晶片的一体式双门SONOS闪存（omega闪存）存储设备

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摘要

In this paper, for the first time, a body-tied double-gate SONOS flash memory device using bulk Si wafer is proposed. Brief fabrication steps and measured characteristics are presented.

机译：本文首次提出了一种采用体硅晶片的体载双栅SONOS闪存器件。介绍了简短的制造步骤和测得的特性。

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《Indium Phosphide and Related Materials, 2001. IPRM》|2001年|p.133-134|共2页
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作者
Il Hwan Cho; Tai-Su Park; Si Young Choi; Jong Duk Lee; Jong-Ho Lee;
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作者单位

Sch. of Electr. Eng. Comput. Sci., Seoul Nat. Univ., South Korea;

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原文格式 PDF
正文语种 eng
中图分类自动化技术、计算机技术;
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专利

1. Comparative Study on Program/Erase Efficiency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors: Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET [J] . So Ra PARK, Kwan Young KIM, Changmin CHOI, Journal of the Korean Physical Society . 2009,第5aPta1期

机译：3-D SONOS闪存单元阵列晶体管的编程/擦除效率和保留特性的比较研究：从双栅极FET和FinFET到全栅FET的结构方法
2. Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning [J] . Jang-Gn Yun, Yoon Kim, Il Han Park, Electron Devices, IEEE Transactions on . 2009,第8期

机译：独立的双门鳍Fin SONOS闪存，采用侧壁间隔物图案制作
3. Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory [J] . Doo-Hyun KIM, Il Han PARK, Seongjae CHO, IEICE Transactions on Electronics . 2009,第5期

机译：双门结构多位SONOS闪存的保留特性仿真
4. Body-tied double-gate SONOS flash (omega flash) memory device built on bulk Si wafer [C] . Il Hwan Cho, Tai-Su Park, Si Young Choi, . 2003

机译：体贴双栅极SONOS闪存（omega闪存）存储器件，基于块状Si晶圆构建
5. Wafer probe and package test failure analysis of NAND flash memory [D] . Kalva, Deepa. 2007

机译：NAND闪存的晶片探头和包装测试失败分析
6. Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory [O] . Seung-Dong Yang, Jun-Kyo Jung, Jae-Gab Lim, 2019

机译：SONOS闪存中氮化物内电荷迁移抑制的研究
7. Extraction of Device Fingerprints Using Built-in Erase-Suspend Operation of Flash Memory Devices [O] . The-Nghia Nguyen, Sunghyun Park, Donghwa Shin 2020

机译：使用闪存设备的内置擦除操作提取设备指纹
8. In the Matter of Certain EPROM, EEPROM, Flash Memory, and Flash Microcontroller211 Semiconductor Devices, and Products Containing Same. Investigation No. 337-TA-395 [R] . 1998

机译：在某些EpROm，EEpROm，闪存和闪存微控制器211半导体器件以及包含它的产品中。调查编号337-Ta-395

Body-tied double-gate SONOS flash (omega flash) memory device built on bulk Si wafer

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