4H-SiC high power SIJFET module

摘要

5kV high power full SiC module technology was developed and 1.6kV 40A SIJFET module was fabricated for the first time, which is the pressure contact flat package type and includes four 6mm × 6mm SiC SIJFETs in addition to one 6mm × 6mm SiC fly wheeling pn diode. SiC SIJFET operates as the bipolar transistor and its current gain ranges from 20 to 4000. Its turn-on time and turn-off time are 360ns and 109 ns respectively. Since the SIJFET module has not only high current gains but also high switching speeds, it is suitable for the low loss power conversion circuits.