Simulation of band-to-band tunneling in Si/Ge and Si/Si1−xGex heterojunctions by using Monte Carlo method

摘要

heterojunctions by employing a two-dimensional (2D) full band Monte Carlo (FBMC) heterojunction simulator. The FBMC simulator is used to get the electrostatic potential and field in a heterojunction, based on which we can calculate the BTBT rate and current by Hurkx's tunneling model. The model parameters have been carefully calibrated to reproduce the experimental reverse current in a Si p-n junction. With this framework, it is shown that the BTBT current in the Si/Ge or Si/Si