首页> 外文会议>IEEE International Conference on Solid-State and Integrated Circuit Technology;ICSICT-2012 >A path-matching timing optimization in physical design for DDR port of a global switch chip
【24h】

A path-matching timing optimization in physical design for DDR port of a global switch chip

机译:全局开关芯片DDR端口物理设计中的路径匹配时序优化

获取原文

摘要

Nowadays, collective communication is becoming the bottleneck of the problem when processing large scale communication. The global network switching chip (D6000GSW) is the core component of Dawning 6000 network system, which realizes the high speed collective communication between the nodes in the computing system. The RX/TX ports of the chip are using DDR transferring mode, so it is important to meet the timing of the these ports. During the physical design stage, various placement and routing will affect the timing result of the DDR ports. The OCV effect will make timing even worse. So in the physical design, we need optimize the timing of these input/output paths. In this paper, a path-matching method which include a full flow from defining the timing constraint to engineering change order(ECO) is present to optimize this SSD timing. The main idea of this method is matching the clock path delay and the data path delay in the DDR port to be identical. Thus the respective timing phase of the input/output data and input/output clock will be good for next level chip. Here we also customize a new pad cell called “WYSSTL2C”. The new pad merges the IO pad and the DDR logic cells together in order to make the data path delay and clock path delay be equal. When the two path is well matched, it is good for the timing closure. Finally, the chip is taped out and passed the testing that prove the design flow is effective.
机译:如今,在进行大规模通信时,集体通信已成为问题的瓶颈。全局网络交换芯片(D6000GSW)是Dawning 6000网络系统的核心组件,它实现了计算系统中节点之间的高速集体通信。芯片的RX / TX端口使用DDR传输模式,因此重要的是要满足这些端口的时序要求。在物理设计阶段,各种布局和布线都会影响DDR端口的时序结果。 OCV效应会使时间更糟。因此,在物理设计中,我们需要优化这些输入/输出路径的时序。本文提出了一种路径匹配方法,该方法包括从定义时序约束到工程变更单(ECO)的整个流程,以优化此SSD时序。此方法的主要思想是将DDR端口中的时钟路径延迟和数据路径延迟匹配为相同。因此,输入/输出数据和输入/输出时钟的相应定时阶段对于下一级芯片将是有利的。在这里,我们还自定义了一个名为“ WYSSTL2C”的新填充单元。新的焊盘将IO焊盘和DDR逻辑单元合并在一起,以使数据路径延迟和时钟路径延迟相等。当两条路径完全匹配时,对于时序收敛很有用。最后,将芯片贴出来并通过测试,证明设计流程是有效的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号