Effect of electrical stress on the Al2O3-based 4H-SiC MOS capacitor with a thin SiO2 interface buffer layer

摘要

interfacial buffer layer (IBL) has been investigated. The electrical characteristics of MOS capacitors have been measured using capacitance-voltage (C-V), current-voltage (I-V) and charge trapping behavior of the films under constant voltage stressing (CVS) to understand the reliability and the interface trapping characteristics of Al