Energy-band engineering and characterization improvements by fluorine incorporation on Gd2O3 nanocrystal memory

摘要

As a potential candidate for future nonvolatile memory (NVM) application, the discrete charge storage nodes formed as the nanocrystal (NC) structure has been caught much attention. Among the NC materials, high-k metal oxide is the unique one due to the mixed chemical reactions during high temperature forming process. The over-view of gadolinium oxide nanocrystal (Gd