Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS

摘要

In this paper, we illustrate by simulation and extend our previous work by demonstration of fabricated devices of electrostatically doped, reconfigurable planar field-effect-transistors with dual work function metal gates. The technological cornerstones for this dual-gated general purpose FET contain Schottky S/D junctions on a silicon-on-insulator substrate. The transistor type, i.e. n-type or p-type FET, is electrically selectable in operation by applying a control-gate voltage which significantly increases the versatility and flexibility in the design of digital integrated circuits.