Effect of Process Temperature on Molybdenum Disulphide Layers Grown by Chemical Vapor Deposition Technique

摘要

Tremendous downscaling of well known semiconductor materials has resulted in various demerits like, defects at the interface and variation in bandgap. In order to overcome these challenges, the beyond graphene area of material science has been explored rapidly with the discovery of transition metal dichalcogenides (TMDC). Among TMDC, molybdenum disulphide (MoS₂)has drawn tremendous attention for their excellent structural, optical, electrical and mechanical properties, which makes it suitable for the use in next generation electronic and optoelectronic devices. Initially, molybdenum (Mo)thin films were grown on silicon by RF sputtering technique at 45 W. Afterwards, sulphonation of Mo was carried out using a custom designed two zone tubular chemical vapor deposition (CVD) system. In order to optimize the growth temperature, the temperature of higher heating zone of CVD system was varied from 650 C to 850 C, The structural, morphological and optical studies reveal that the higher temperature is favorable for the growth of MoS₂ layers.