Modeling Alpha and Neutron Induced Soft Errors in Static Random Access Memories

摘要

Experimental thermal neutron and alpha soft error test results of a 4 Mbit SRAM fabricated on a 0.25 驴m process are evaluated using Vanderbilt University''s RADSAFE toolkit. The capabilities of the radiation transport code are demonstrated by accurately reproducing experimental results and predicting operational soft error rates for the memory.