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2Mb SPRAM Design: Bi-Directional Current Write and Parallelizing-Direction Current Read Schemes Based on Spin-Transfer Torque Switching

机译:2Mb SRAM设计:基于自旋转移转矩切换的双向电流写入和并行方向电流读取方案

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摘要

A 1.8V 2-Mb SPRAM (SPin-transfer torque RAM) chip using 0.2-驴m logic process with MgO tunneling barrier cell demonstrates the circuit technologies for potential low power non-volatile RAM, or universal memory. This chip features: an array scheme with bit-by-bit bi-directional current write to achieve proper spin-transfer torque writing of 100-ns, and parallelizing-direction current reading with low voltage bit-line that leads to 40-ns access time.
机译:一个使用0.2-驴m逻辑工艺和MgO隧穿势垒单元的1.8V 2-Mb SPRAM(SP传递扭矩RAM)芯片演示了潜在的低功耗非易失性RAM或通用存储器的电路技术。该芯片具有:一种阵列方案,具有逐位双向电流写入功能,以实现100ns的适当自旋传递扭矩写入,以及通过低压位线的并行方向电流读取,从而导致40ns的访问时间。

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