Optoelectronic applications of heterojunction bipolar transistor technology: promises and problems

机译：异质结双极晶体管技术的光电应用：前景与问题

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Abstract: This is a review of general characteristics ofHeterojunction Bipolar Transistors (HBTs) and thestatus of Optoelectronic Integrated Circuits (OEICs)with HBT-based electronics. We also analyze differentapproaches taken at the present for the monolithicintegration.!32

机译：摘要：这是对异质结双极晶体管（HBT）的一般特性以及基于HBT的电子产品的光电集成电路（OEIC）的现状的综述。我们还分析了当前用于单片集成的不同方法。32

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《High-Speed Electronics and Optoelectronics》|1992年|p.27-32|共6页
会议地点 Somerset NJ(US)
作者
Author(s): Leda M. Lunardi ATT Bell Labs. Holmdel NJ USA; S.Chandrasekhar ATT Bell Labs. Holmdel NJ USA.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. AlGaAs/GaAs Heterojunction Bipolar Transistors: The Device Technology and Circuit Applications [J] . Tadao Ishibashi, Osaake Nakajima, Koichi Nagata, NTT Review . 1996,第6期

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2. GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications [J] . Kim M.E., Oki A.K. IEEE Transactions on Microwave Theory and Techniques . 1989,第9期

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3. Low-Capacitance Low-Voltage Transient Voltage Suppressor Using Diode-Activated SiGe Heterojunction Bipolar Transistor in SiGe Heterojunction Bipolar Transistor Bipolar Complementary Metal-Oxide-Semiconductor Process [J] . Sheng-Huei Dai, Jeng-Jie Peng, Chia-Cheng Chen, Japanese journal of applied physics . 2009,第4issue2期

机译：SiGe异质结双极晶体管双极互补金属氧化物半导体工艺中使用二极管激活的SiGe异质结双极晶体管的低电容低电压瞬态电压抑制器
4. Optoelectronic applications of heterojunction bipolar transistortechnology: promises and problems, [C] . Leda M. Lunardi, ATT Bell Labs., Holmdel, High-Speed Electronics and Optoelectronics . 1992

机译：异质结双极晶体管技术的光电应用：前景与问题，
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

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8. Exploratory Development of SiC Bipolar Transistors and GaN heterojunction Bipolar Transistors for High-Power Switching Applications. [R] . Cooper, J. A. 2003

机译：用于大功率开关应用的siC双极晶体管和GaN异质结双极晶体管的探索性开发。

Optoelectronic applications of heterojunction bipolar transistor technology: promises and problems

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