Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, East Qinghua Road, Beijing 100083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, East Qinghua Road, Beijing 100083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, East Qinghua Road, Beijing 100083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, East Qinghua Road, Beijing 100083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, East Qinghua Road, Beijing 100083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, East Qinghua Road, Beijing 100083, People's Republic of China;
internal quantum efficiency; p-doping profile; waveguide band gap; InGaAsP/InP; LASTIP; high power; 1.55μm; laser;
机译:1.55-μmInGaAsP / InP大功率半导体二极管激光器的制作与优化
机译:基于不对称量子阱分离约束InGaAsP / InP异质结构的大功率二极管激光器(λ= 1.7-1.8μm)
机译:不同填充因子的InGaAsP-InP大功率二极管激光器阵列的瞬态热分析
机译:高功率,窄束,反导1.55- / spl um / m InGaAsP / InP二极管激光器阵列
机译:大功率近谐振1.55微米发射InGaAsP / InP反导二极管激光器阵列。
机译:基于大功率DFB二极管激光器的CO-QEPAS传感器:优化和性能
机译:耦合脊形波导InP / InGaAsP二极管激光器的锁相特性
机译:用于大功率运行的InGaasp / Gaas激光二极管工艺优化