AlGaInN laser diode technology for free-space telecom applications

机译：适用于自由空间电信应用的AlGaInN激光二极管技术

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The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ～380nm, to the visible ～530nm, by tuning the indium content of the laser GaInN quantum well. We consider the suitability of AlGaInN laser diode technology for free space laser communication, both airborne links and underwater telecom applications, mainly for defence and oil & gas industries.

机译：AlGaInN材料系统可通过调节激光GaInN量子阱的铟含量，在从〜380nm到可见光〜530nm的很宽的波长范围内制造激光二极管。我们认为AlGaInN激光二极管技术适用于自由空间激光通信，包括空中链接和水下电信应用，主要用于国防和石油天然气行业。

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来源
《Free-space laser communication and atmospheric propagation XXVII》|2015年|93540Q.1-93540Q.11|共11页
会议地点 San Francisco CA(US)
作者
S.P. Najda; P. Perlin; T. Suski; L. Marona; M. Bockowski; M. Leszczynski; P. Wisniewski; R. Czernecki; R. Kucharski; G. Targowski; S. Watson; A.E.Kelly; M.A.Watson; P. Blanchard; H. White;
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作者单位

TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

Ammono S.A., Czerwonego Krzyz a 2/31, 00-377 Warsaw, Poland;

TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

School of Engineering, University of Glasgow, Glasgow G12 8LT, U.K.;

School of Engineering, University of Glasgow, Glasgow G12 8LT, U.K.;

BAE Systems, Advanced Technology Centre, Sowerby Building, FPC 267, Filton, Bristol BS34 7QW, U.K.;

BAE Systems, Advanced Technology Centre, Sowerby Building, FPC 267, Filton, Bristol BS34 7QW, U.K.;

BAE Systems, Advanced Technology Centre, Sowerby Building, FPC 267, Filton, Bristol BS34 7QW, U.K.;

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原文格式 PDF
正文语种 eng
中图分类
关键词
GaN laser; GaN array; free-space communication;

机译：氮化镓激光器氮化镓阵列;自由空间通信;

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AlGaInN laser diode technology for free-space telecom applications

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