Contact angle measurement of wafer surfaces for integrating laser diode and optical isolator by wafer bonding

摘要

An optical isolator with a semiconductor guiding layer is fabricated by wafer bonding technique. A magnetic garnet cladding layer is contacted with the GaInAsP guiding layer by wafer bonding. GalnAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer bonding between GalnAsP and garnet crystals. The most hydrophilic GaInAsP surface was obtained after an O_2 plasma activation process. Wafer bonding was successfully achieved between GaInAsP rib waveguides activated by O_2 plasma and magnetic garnets.