Effect of Post Oxidation Annealing on VCSEL Device Performance

摘要

Vertical cavity surface emitting laser (VCSEL) device current confinement is achieved by wet oxidation of Al_xGa_(1-x)As layer. However it is well known that wet oxidation also creates trapped charge and interface states. We performed the annealing experiment at different temperatures and observed significant improvement of device light output characteristics. It is confirmed from capacitance-voltage characteristics that negatively charged trap charge and interface states reduced due to annealing at 400 C in nitrogen environment.