CONTINUOUS AND GRANULAR METAL FILMS PRODUCED BY CHEMICAL VAPOR DEPOSITION WITH CHELATE COMPOUND PRECURSORS

摘要

In the paper the chemical principles of continuous and granular film formation are considered for low temperature chemical vapor metal deposition with chelate compound precursors as bis-(thrifluoroketoiminato) Ni(Ⅱ) and Ws-(dipivaloylmethanato) Cu(?). The Cu and Ni films grown on transition metal substrates are replicas of substrate surfaces. The metal deposition on insulator substrate surface leads to the granular film formation. Hydrogen atmosphere stimulates an increase of metal particle size and inert atmosphere as Ar provides nucleation of new nanoparticles. The kinetics and mechanism of multistage chemical reaction and mechanism film growth are discussed.