TIN OXIDE DEPOSITION IN A COLD-WALL CVD REACTOR: COMPUTATIONS AND EXPERIMENTS

摘要

The design of a CVD process in a complex reactor configuration is performed by combining computational fluid dynamics simulations (CFD) and experiments. This design methodology is implemented in a horizontal cold-wall reactor, where tin oxide deposition on silicon substrates at atmospheric pressure is experimentally investigated. A set of measured deposition rates at different operating conditions are used to determine a Langmuir-Hinshelwood mechanism of the growth kinetics of tin oxide films by SnCl_4 oxidation in a single wafer reactor. The coupled kinetic/CFD model is then used for the analysis of the effects of important physical and operational parameters on the reactor performance, aiming at the efficient design and optimization of the CVD process.