Evaluation and control of strain in Si induced by patterned SiN stressor

摘要

We evaluated the strain introduced in the Si-substrate by the patterned SiN film using UV-Raman spectroscopy. We confirmed that the tensile/compressive strain was induced under the SiN film with compressive/tensile inner stress. The density of the SiN film was evaluated using X-ray reflectometry. The inner stress of the SiN film was proportional to the film density. Therefore, the induced strain can be control by changing SiN CVD conditions. Furthermore, the film density was increased and induced strain was changed after annealing.