FREQUENCY-DEPENDENT CONDUCTANCE AND CAPACITANCE OF THE UNIPOLAR SEMICONDUCTOR HOMOJUNCTION AND ESTIMATION OF INTERFACE-STATES PARAMETERS IN Si/Si DIRECTLY BONDED STRUCTURES

摘要

Within the framework of the thermoionic model and with due regard for the action of interface states (ISs) as traps for majority carriers, we calculated the frequency-dependent small-signal complex conductivity Y~- of the unipolar semiconductor junction to subsequently discuss the possibility of extracting IS parameters from electrical measurements of bonded junctions. A short-cut procedure for evaluating IS parameters from capacitance and conductance data is developed, and estimates for real p-Si/p-Si directly bonded structures are given. These estimates show the real bonded junctions to be laterally non-uniform, with "punctures" present in their interfacial potential barrier.