A 1V Ultra-Low Power High Precision CMOS Voltage Reference

机译：1V超低功耗高精度CMOS电压基准

获取原文

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

A 1V ultra-low power high precision voltage reference is designed and implemented with UMC mixed-signal 0.18-mum CMOS technology. A novel low-voltage high-precision current mirror is introduced in the voltage reference in order to reduce temperature coeff

机译：采用UMC混合信号0.18微米CMOS技术设计和实现了1V超低功耗高精度电压基准。在电压基准中引入了一种新型的低压高精度电流镜，以降低温度系数

著录项

来源
《Electron Devices and Solid- State Circuits, 2007 IEEE Conference on》|2007年|P.847-850|共4页
会议地点 TainanTaiwan
作者
Jirong Ma; Yongming Li; Chun Zhang; Zhihua Wang;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词
CMOS analogue integrated circuits; CMOS digital integrated circuits; current mirrors; integrated circuit layout; low-power electronics; mixed analogue-digital integrated circuits; reference circuits; UMC mixed-signal CMOS technology; circuit layout; current mirro;

机译：CMOS模拟集成电路； CMOS数字集成电路；电流镜集成电路布局；低功耗电子产品；混合模数集成电路；参考电路； UMC混合信号CMOS技术；电路布局；当前镜像;

相似文献

外文文献
中文文献
专利

1. A 0.12–0.4 V, Versatile 3-Transistor CMOS Voltage Reference for Ultra-Low Power Systems [J] . Arthur Campos de Oliveira, David Cordova, Hamilton Klimach, IEEE transactions on circuits and systems . I , Regular papers . 2018,第11期

机译：适用于超低功耗系统的0.12–0.4 V通用3晶体管CMOS电压基准
2. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference [J] . Denis Flandre, El Hafed Boufouss, Laurent A. Francis, Sensors . 2013,第12期

机译：超低功率高温和辐射硬互补金属氧化物半导体（CMOS）绝缘体上硅（SOI）电压基准
3. A sub-1-V, high precision, ultra low-power, process trimmable, resistorless voltage reference with low cost 90-nm standard CMOS technology [J] . Anass Samir, Edith Kussener, Wenceslas Rahajandraibe, Analog Integrated Circuits and Signal Processing . 2012,第3期

机译：具有低成本90nm标准CMOS技术的低于1V的高精度，超低功耗，过程可调整的无电阻基准电压源
4. A 1V Ultra-Low Power High Precision CMOS Voltage Reference [C] . Jirong Ma, Yongming Li, Chun Zhang, IEEE Conference on ELectron Devices and Solid-State Circuits . 2007

机译：1V超低功耗高精度CMOS电压参考
5. Sub-1V supply voltage references for CMOS technology based on threshold-voltage-difference architecture. [D] . Fang, Fang. 2006

机译：基于阈值电压差架构的CMOS技术的低于1V的电源参考电压。
6. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference [O] . El Hafed Boufouss, Laurent A. Francis, Valeriya Kilchytska, 2013

机译：超低功率高温和辐射硬互补金属氧化物半导体（CMOS）绝缘体上硅（SOI）电压基准
7. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference [O] . El Hafed Boufouss, Laurent A. Francis, Valeriya Kilchytska, 2013

机译：超低功耗高温和辐射硬互补金属氧化物半导体（CmOs）绝缘体上硅（sOI）电压基准

A 1V Ultra-Low Power High Precision CMOS Voltage Reference

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅