A Low-Voltage Charge Pump Circuit with High Pumping Efficiency in Standard CMOS Logic Process

机译：在标准CMOS逻辑工艺中具有高抽运效率的低压电荷泵电路

获取原文

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

A new charge pump circuit feasible for the implementation with standard CMOS logic process is proposed. The proposed charge pump employs complementary dual charge-transfer paths and a simple two-phase clock. The charge transfer switches in each pumping st

机译：提出了一种新的电荷泵电路，适用于采用标准CMOS逻辑工艺实现。提出的电荷泵采用互补的双电荷传输路径和简单的两相时钟。每个泵站中的电荷转移开关

著录项

来源
《Electron Devices and Solid- State Circuits, 2007 IEEE Conference on》|2007年|P.317-320|共4页
会议地点 TainanTaiwan
作者
Jin-Young Park; Yeonbae Chung;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词
CMOS logic circuits; charge-coupled devices; CMOS logic process; charge transfer switches; complementary dual charge-transfer paths; low-voltage charge pump circuit; two-phase clock;

机译：CMOS逻辑电路；电荷耦合器件CMOS逻辑工艺；电荷转移开关；互补的双电荷转移路径；低压电荷泵电路；两相时钟;

相似文献

外文文献
中文文献
专利

1. An Efficient, Wide-Output, High-Voltage Charge Pump With a Stage Selection Circuit Realized in a Low-Voltage CMOS Process [J] . Zhicong Luo, Li-Chin Yu, Ming-Dou Ker Circuits and Systems I: Regular Papers, IEEE Transactions on . 2019,第9期

机译：具有通过低压CMOS工艺实现的级选择电路的高效，宽输出，高压电荷泵
2. An Efficient, Wide-Output, High-Voltage Charge Pump With a Stage Selection Circuit Realized in a Low-Voltage CMOS Process [J] . Zhicong Luo, Li-Chin Yu, Ming-Dou Ker Circuits and Systems I: Regular Papers, IEEE Transactions on . 2019,第9期

机译：具有通过低压CMOS工艺实现的级选择电路的高效，宽输出，高压电荷泵
3. Design to suppress return-back leakage current of charge pump circuit in low-voltage CMOS process [J] . Yi-Hsin Weng, Hui-Wen Tsai, Ming-Dou Ker Microelectronics reliability . 2011,第5期

机译：在低压CMOS工艺中抑制电荷泵电路的回流泄漏电流的设计
4. A Low-Voltage Charge Pump Circuit with High Pumping Efficiency in Standard CMOS Logic Process [C] . Park Jin-Young, Chung Yeonbae, EDSSC IEEE Conference on ELectron Devices and Solid-State Circuits . 2007

机译：一种低压电荷泵电路，具有高泵浦效率的标准CMOS逻辑过程
5. A Charge Pump Architecture with High Power-Efficiency and Low Output Ripple Noise in 0.5 mum CMOS Process Technology. [D] . Modi, Primit. 2012

机译：采用0.5 um CMOS工艺技术的具有高功率效率和低输出纹波噪声的电荷泵架构。
6. A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes [O] . Xiang Li, Rui Li, Chunge Ju, 2019

机译：用于微机械陀螺仪的标准CMOS工艺中的调节温度不敏感高压电荷泵
7. Design of charge pump circuit with consideration of gate-oxide reliability in low-voltage CMOS processes [O] . Ming-dou Ker, Senior Member, Shih-lun Chen, 2006

机译：考虑低压CmOs工艺中栅氧化层可靠性的电荷泵电路设计

A Low-Voltage Charge Pump Circuit with High Pumping Efficiency in Standard CMOS Logic Process

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅