Dept. of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India;
Dept. of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India;
Department of ECE, Motilal Nehru National Institute of Technology, Allahabad, UP, 211004, India;
Dept. of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India;
Department of ECE, School of Engineering Technology, Mizoram University, Aizawl, India;
Dept. of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India;
Dept. of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India;
Dept. of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India;
Zinc oxide; II-VI semiconductor materials; Thin film transistors; Logic gates; Insulators; Dielectric constant;
机译:用于极其稳定的有机薄膜晶体管操作的亚20nm,高k聚合物电介质的分子薄疏水性皮肤层的自发产生
机译:电泳显示印刷技术全溶液处理有机薄膜晶体管背板
机译:用于信息显示的背板薄膜晶体管开发的最新进展
机译:用于下一代背板显示技术的提出的高k电介质基薄膜晶体管
机译:了解具有高k栅极介电常数的固溶处理金属氧化物薄膜晶体管的迁移率。
机译:氧化石墨烯作为介电和电荷陷阱元素并五苯的有机薄膜晶体管在非易失性存储器中的应用
机译:用于信息显示的背板薄膜晶体管开发的最新进展
机译:用于下一代显示器的原子层沉积制备的高性能和高可靠性ZnO薄膜晶体管。