Abstract: A 3D waveguide simulation technique is presented. The technique combines the finite- difference-time-domain (FDTD) and mode-propagation-by-Fourier-expansion (MPFE) methods for guided-wave device simulation. The algorithm consists of dividing the device into a series of small sections in which the FDTD method is employed to simulate for very complete wave characteristics. In particular, the wave characteristics around abrupt junctions of the device are simulated comprehensively by this algorithm. At the end of each section, the MPFE method is applied to simulate for optical modes and their profiles. These modes and profiles are used to extract mode parameters from the FDTD results for individual mode analysis. The modes and extracted parameters are further served as inputs to the next section for continued FDTD simulation. Thus, one can simulate arbitrarily shaped and optically large devices for very complete wave characteristics by using these two methods iteratively. The technique, together with well established semiconductor process and device simulators, presents a well-rounded methodology for semiconductor integrated-optic device simulation. This simulation methodology is illustrated by simulation and analysis of a variety of silicon based electro-optic modulators and branching waveguide structures.!14
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