Measurement of diffusion length of minority carrier in Si crystal by photoluminescence tomography

机译：用光致发光层析成像法测量硅中少数载流子的扩散长度

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A new method for the measurement of the diffusion length of minority carriers in Si crystals was developed using photo-luminescence tomography. High sensitive laser tomography was developed to observe the band edge emission image by using a cw Nd:YAG laser. PL images in as-grown and intrinsic gettering treated CZ Si crystals were obtained. Depth profiles of the diffusion length from photo-luminescence, i.e. the diffusion length of minority carriers were obtained from the PL images.

机译：利用光致发光层析成像技术，开发了一种测量硅中少数载流子扩散长度的新方法。开发了高灵敏度激光断层扫描，以使用连续Nd：YAG激光器观察带边缘发射图像。获得了已生长和固有吸杂处理的CZ Si晶体的PL图像。从PL图像获得来自光致发光的扩散长度的深度分布，即少数载流子的扩散长度。

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《Defect recognition and image processing in semiconductors and devices》|1993年|131-134|共4页
会议地点 Santander(ES);Santander(ES)
作者
K.Moriya;
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作者单位

Corporate RD Center, Mitsui Mining Smelting Co., Ltd., 1333-2 Haraichi, Ageo Shi, Saitama, 362 Japan;

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原文格式 PDF
正文语种 eng
中图分类硅酸盐工业;无机质材料;
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专利

1. Measurement of the minority carrier diffusion length in thin wafers of semiconductor crystals [J] . I. A. Bolesov, V. P. Astakhov, V. V. Karpov Instruments and Experimental Techniques . 2003,第2期

机译：半导体晶体薄晶片中少数载流子扩散长度的测量
2. Minority carrier diffusion length measurements of semiconductors using a multiwavelength laser SQUID microscope [J] . Daibo M., Kikuchi T., Yoshizawa M. IEEE Transactions on Applied Superconductivity . 2003,第2期

机译：使用多波长激光SQUID显微镜测量半导体的少数载流子扩散长度
3. Minority carrier diffusion length measurements of semiconductors using a multiwavelength laser SQUID microscope [J] . Daibo M., Kikuchi T., Yoshizawa M. IEEE Transactions on Applied Superconductivity . 2003,第2期

机译：使用多波长激光SQUID显微镜测量半导体的少数载流子扩散长度
4. Measurement of diffusion length of minority carrier in Si crystal by photoluminescence tomography [C] . International conference on Defect recognition and image processing in semiconductors and devices . 1994

机译：光致发光断层扫描的少数载体在Si晶体中的扩散长度测量
5. Aluminum gettering of crystalline silicon for improvement of minority carrier diffusion length and for studies of fundamental diffusion mechanisms. [D] . Joshi, Subhash Mukund. 2000

机译：晶体硅的铝吸杂剂可改善少数载流子扩散长度并用于基本扩散机理的研究。
6. Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging [O] . K. Alberi, B. Fluegel, H. Moutinho, -1

机译：通过光致发光成像测量跨多晶半导体中多个晶粒的远程载流子扩散
7. First working group meeting on the minority carrier diffusion length/lifetime measurement: Results of the round robin lifetime/diffusion length tests [O] . Cudzinovic, M., Sopori, B. 1995

机译：关于少数载流子扩散长度/寿命测量的第一次工作组会议：循环寿命/扩散长度测试的结果
8. First working group meeting on the minority carrier diffusion length/lifetime measurement: Results of the round robin lifetime/diffusion length tests [R] . Cudzinovic, M. , Sopori, B. 1995

机译：关于少数载流子扩散长度/寿命测量的第一次工作组会议：循环寿命/扩散长度测试的结果

Measurement of diffusion length of minority carrier in Si crystal by photoluminescence tomography

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