首页> 外文会议>Conference on Novel In-Plane Semiconductor Lasers; 20080121-24; San Jose,CA(US) >High brightness diode lasers with very narrow vertical divergence
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High brightness diode lasers with very narrow vertical divergence

机译:垂直发散非常窄的高亮度二极管激光器

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摘要

A narrow vertical divergence of about 30° including 95% of power is highly desired in many applications. Principal designs for narrow divergence diode lasers like simple broad waveguide and more sophisticated resonant waveguide structures are discussed. Devices with narrow divergence could be realized in the wavelength range 800nm to 1060nm using very broad waveguide structures. More than 1W in fundamental mode and about 5W nearly diffraction limited output could be achieved from ridge waveguide laser and from diode lasers with tapered resonator structure, respectively.
机译:在许多应用中,非常需要约30°的窄垂直散度,包括95%的功率。讨论了诸如简单宽波导和更复杂的谐振波导结构之类的窄发散二极管激光器的主要设计。使用非常宽的波导结构,可以在800nm至1060nm的波长范围内实现发散窄的器件。脊形波导激光器和具有锥形谐振器结构的二极管激光器可以分别实现1W以上的基本模式和5W左右的衍射极限输出。

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