1.2 THz maximum frequency of oscillation achieved by using 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT

摘要

We report a high maximum frequency of oscillation ( fmax) and a current-gain cutoff frequency (fT).fmax/fT = 1.2 THz/220 GHz; at VDS=1V with pseudomorphic high-electron mobility transistor (PHEMT), using a composite, InGaAs/InAs channel and an asymmetric gate recess. This result was achieved with long gate length LG=75 nm. The gate-source distance was 0.5 μm, in the recessed region the asymmetric distance L