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High Toughness and Moisture Insensitive Hydrogenated Amorphous Silicon Carbide Films for MEMS/NEMS

机译:用于MEMS / NEMS的高韧性,高湿敏性的氢化非晶碳化硅薄膜

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摘要

This research characterized the mechanical behavior including cohesive fracture energy of a range of a-SiC:H films. Fracture energy increased with film Young's modulus. Surprisingly, some non-stoichiometric a-SiC:H films exhibited remarkablyhigh cohesive fracture energy which was rationalized in terms of the onset of local crack tip plastic deformation. We also found that the a-SiC:H films exhibited an almost complete insensitivity to moisture assisted cracking. The cracking that was observed could be modeled with a thermally assisted crack growth theory.
机译:这项研究表征了一系列a-SiC:H薄膜的力学行为,包括内聚断裂能。断裂能随膜的杨氏模量增加。出乎意料的是,一些非化学计量的a-SiC:H膜表现出非常高的内聚破裂能,这是根据局部裂纹尖端塑性变形的发生而合理化的。我们还发现,a-SiC:H膜对水分辅助的裂纹几乎不敏感。可以使用热辅助裂纹扩展理论对观察到的裂纹进行建模。

著录项

  • 来源
    《Chemical Sensors 9 and MEMS/NEMS 9》|2010年|p.257-261|共5页
  • 会议地点 Las Vegas NV(US);Las Vegas NV(US)
  • 作者单位

    Department of Materials Science and Engineering Stanford University,rnStanford, CA 94305, USA;

    Intel Corporation, Hillsboro, OR 97124, USA;

    Intel Corporation, Hillsboro, OR 97124, USA;

    Department of Materials Science and Engineering Stanford University,rnStanford, CA 94305, USA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TP212;
  • 关键词

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