Measurement of the excitation laser wavelength dependence of spectral diffusion from a single InGaN quantum dot.

摘要

Thanks to the widely tunable emission wavelength range from the UV, though the visible, and into the IR, and the relatively large operating temperature range from cryogenic to room temperature and above, Ⅲ-Nitride quantum dot (QDs) based single photon emitters have been attracting more and more attention in recent years. However, III-Nitrides suffer from pronounced spectral diffusion due to the interactions between the emitters and the charge fluctuations in the surrounding environments.