Wide-Bandgap Semiconductor Devices for Automobile Applications

摘要

In this paper, we discuss requirements of power devices for automobile applications, especially hybrid vehicles, and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. Observation by a thermograph image of the device under high current operation showed the AlGaN/GaN HEMT operated at more than 300℃. All the results of our GaN are really promising to realize high performance and small size inverters for future automobiles.