Influence of thermal load on 450 mm Si-wafer IPD during lithographic patterning

机译：光刻构图过程中热负荷对450 mm Si晶圆IPD的影响

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We report on Finite Element Modeling (FEM) of the influence of heat load due to the lithographic exposure on the inplanedistortion (IPD) of 450 mm Si-wafers and hence on the effect of the heat load on the achievable image placementaccuracy. Based on a sce

机译：我们报告了有限元建模（FEM）对光刻曝光对450毫米Si晶圆的面内失真（IPD）的热负荷影响的影响，并因此对热负荷对可实现的图像放置精度的影响进行了报道。基于场景

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来源
《Alternative lithographic technologies IV.》|2012年|P.0J.1-0J.8|共8页
会议地点 San Jose CA(US)
作者
Thomas Peschel; Gerhard Kalkowski; Ramona Eberhardt;
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作者单位

Fraunhofer Institut für Angewandte Optik und Feinmechanik (Germany);

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会议组织
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;微电子学、集成电路（IC）;
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Influence of thermal load on 450 mm Si-wafer IPD during lithographic patterning

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