New Development Application Method to Improve Critical Dimension Control

摘要

As critical dimension shrink below 0.13um at the using KrF resists, critical dimension control becomes a major concern, development is one of the critical processes affecting CD control. We have focused attention on the stage of TMAH puddle & development formation. How to fast develop solution percolates through the exposured area was the key to expanding the process latitude and CD uniformity. Our investigated new development method was provided this key factor. In this paper, we compared with standard development method and our proposed new double development method, and it was found that the process latitude, CD uniformity of within-wafer and within-line pattern, the profile of the top of the pattern were improved by New development method for various pattern features.