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Transistor Fabrication for Sub-90 nm transistor by using Trim technology at ArF light source

机译:在ArF光源下使用Trim技术制造Sub-90 nm晶体管的晶体管

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The trim process with organic BARC to fabricate sub-90 nm gate was developed with ArF lithography. This trim process is not required extra hard mask layer which we usually use to overcome weak etching resistance of ArF photoresist. BARC etching step has been chosen as the best layer to apply trim process. We understood that the mix ratio of Cl_2/O_2 is the key process parameter to control etching bias. Also we observed that ID bias by changing BARC etching time. PCM and TEM inspection results proved that excellent transistor performance without any issues. LER improvement was observed by trim process application, and it helps to improve device performance. This organic BARC based trim process showed very promising results for sub-90 nm gate patterning.
机译:使用ArF光刻技术开发了使用有机BARC修整工艺以制造90 nm以下的栅极的方法。这种修整工艺不需要额外的硬掩模层,我们通常用它来克服ArF光刻胶的弱耐蚀性。 BARC蚀刻步骤已被选为应用修整工艺的最佳层。我们了解到Cl_2 / O_2的混合比例是控制刻蚀偏压的关键工艺参数。我们还观察到ID偏差是通过改变BARC蚀刻时间造成的。 PCM和TEM检查结果证明了优异的晶体管性能,没有任何问题。通过修整工艺应用可以观察到LER的改善,这有助于提高器件性能。这种基于有机BARC的修整工艺对于90nm以下的栅极构图显示出非常有希望的结果。

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