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Thermal Effects Study of Chemically Amplified Resist

机译:化学放大电阻的热效应研究

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For the sub-100-nm pattern generation, thermal treatment is one of the new process extension techniques with current day lithography equipment and chemically-amplified resist. The key element to introduce these new techniques is in the understanding of mechanistic behaviors that drive photo resist image rendering. Thermal processes, such as soft bake, post exposure bake, and thermal reflow process, are same thermal processes, but produce different chemical and physical behaviors in the chemically-amplified resist. In this paper, those thermal processes are described and modeled for the property change of a positive type 193 nm chemically amplified resist. Those simulated results agree well with experimental results. Those thermal effects move the boundaries of resist bulk images to a center point and make these boundaries dense. Due to pattern types, the thermal reflow process technology and the overbake and undertake technologies of soft bake and post exposure bake can be used for the 45 nm critical dimension. Combining the benefits of thermal processes becomes possible to produced the below 45 nm critical dimension.
机译:对于低于100 nm的图形生成,热处理是当今光刻设备和化学放大抗蚀剂的新工艺扩展技术之一。引入这些新技术的关键要素是对驱动光致抗蚀剂图像渲染的机械行为的理解。诸如软烘烤,曝光后烘烤和热回流过程之类的热过程是相同的热过程,但是在化学放大的抗蚀剂中产生不同的化学和物理行为。在本文中,将针对正型193 nm化学放大型抗蚀剂的特性变化描述和建模这些热处理过程。这些模拟结果与实验结果非常吻合。这些热效应将抗蚀剂块状图像的边界移动到中心点并使这些边界密集。由于图案类型不同,可以将热回流工艺技术以及软烘烤和曝光后烘烤的过烘烤和承接技术用于45 nm临界尺寸。结合热工艺的好处,可以生产低于45 nm的临界尺寸。

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