首页> 外文会议>Advances in Resist Technology and Processing XXIII pt.2 >Formulated Surface Conditioners to Enhance the Non-collapse Window and Maintain Defect Control: A Bi-functional Approach for Sub-100-nm Lithography
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Formulated Surface Conditioners to Enhance the Non-collapse Window and Maintain Defect Control: A Bi-functional Approach for Sub-100-nm Lithography

机译:制定了表面调节剂,以增强无塌陷窗口并保持缺陷控制:用于100 nm以下光刻的双功能方法

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One key challenge in sub-100 nm lithography is line pattern collapse. Pattern collapse has become an obstacle in device manufacturing processes requiring dense-high aspect ratio resist lines. In addition to pattern collapse, defect control continues to be a factor in IC manufacturing. In this study, the impact of a formulated surface conditioner, OptiPatten® Clear, with bi-functional capabilities: improved non-collapse window and defect control, was tested using a 193 nm lithographic process. To determine pattern collapse performance, 100 nm dense lines/space (L/S) and 100 nm 1:0.9 L/S were patterned into 240 nm of resist on 200 mm wafers. The wafers were then processed with developer and a formulated surface conditioner and compared to wafers processed with developer and DI water. When analyzed, wafers processed with surface conditioner had a 33% increase in Depth-of-Focus (DOF) and a 25% increase in Critical Normalized Aspect Ratio (CNAR) compared to DI water. Optical proximity effects are often credited for having a first-order influence on pattern collapse. Trench feature data was generated using an Scanning Electron Microscope (SEM) to compare the pattern collapse performance of OptiPattern® Clear to DI water. The data strongly suggests optical proximity effects are a second-order factor which OptiPattern Clear resolves. Defect performance for OptiPattern® Clear was measured by comparison with a DI water baseline. A production reticle was used to process wafers patterned with 120 nm L/S with 240 nm of resist. The wafers processed with OptiPattern® Clear had similar defect performance as the DI water.
机译:低于100 nm的光刻技术的一个主要挑战是线条图案的塌陷。图案塌陷已经成为需要高密度纵横比高的抗蚀剂线的器件制造过程中的障碍。除了图案崩溃以外,缺陷控制仍然是IC制造中的一个因素。在这项研究中,使用193 nm光刻工艺测试了具有双功能功能的配方表面调节剂OptiPatten®Clear的影响:改进的无塌陷窗口和缺陷控制。为了确定图案塌陷性能,在200 mm晶片上将100 nm密集线/间隔(L / S)和100 nm 1:0.9 L / S图案化为240 nm抗蚀剂。然后用显影剂和配制的表面调节剂处理晶圆,并与用显影剂和去离子水处理的晶圆进行比较。分析后,与去离子水相比,用表面调节剂处理的晶片的焦深(DOF)增加了33%,临界归一化纵横比(CNAR)增加了25%。光学邻近效应通常被认为对图案塌陷具有一阶影响。使用扫描电子显微镜(SEM)生成沟槽特征数据,以比较OptiPattern®Clear与去离子水的图案塌陷性能。数据强烈表明,光学邻近效应是OptiPattern Clear可以解决的二阶因素。通过与去离子水基线进行比较来测量OptiPattern®Clear的缺陷性能。生产掩模版用于处理以120 nm L / S和240 nm抗蚀剂图案化的晶圆。经OptiPattern®Clear处理的晶圆具有与去离子水相似的缺陷性能。

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