首页> 外文会议>Advances in Resist Technology and Processing XXIII pt.2 >Monitoring Photoresist Dissolution in Supercritical Carbon Dioxide Using a Quartz Crystal Microbalance
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Monitoring Photoresist Dissolution in Supercritical Carbon Dioxide Using a Quartz Crystal Microbalance

机译:使用石英晶体微量天平监测超临界二氧化碳中的光刻胶溶解

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New lithographic techniques are being implemented to help further reduce feature sizes in microelectronics. A technique for the development of standard commercial extreme ultraviolet (EUV) photoresists in a carbon dioxide compatible salt (CCS) and supercritical carbon dioxide (scCO_2) solution is being investigated to reduce line edge roughness and image collapse of high aspect ratio features. To understand the kinetics and overall mechanism of photoresist dissolution into the high pressure CCS/scCO_2 solution, we use a quartz crystal microbalance (QCM). QCM measures the frequency changes of the quartz crystal when mass loadings, temperature, pressure, and solution viscosity change. In the last decade, QCM has been used to monitor dissolution of photoresist materials in liquid solutions in real time. The technique has been adapted to high pressure systems, with corrections for pressure and solution viscosity effects. In this paper, QCM was used in high pressure scCO_2 conditions to monitor the dissolution kinetics of the photoresist using the CCS/scCO_2 solution. The frequency changes of the quartz crystal were recorded and corrected for both prssure and solution viscosity to estimate the mass removed as a function of time. The initial photoresist dissolution rates in the CCS/scCO_2 solution at temperatures between 35℃ and 50℃ and pressures ranging from 3500 psi to 5000 psi are reported. The plots of photoresist removal with time are linear signifying a zero order overall removal rate. The activation energy for photoresist removal at a CO_2 density of 0.896 g/ml is 76 mJ/mol.
机译:正在实施新的光刻技术,以帮助进一步减小微电子学中的特征尺寸。正在研究一种在二氧化碳兼容盐(CCS)和超临界二氧化碳(scCO_2)溶液中开发标准商用极紫外(EUV)光致抗蚀剂的技术,以降低线条边缘的粗糙度和高纵横比特征的图像崩溃。为了了解光刻胶溶解到高压CCS / scCO_2溶液中的动力学和整体机理,我们使用了石英晶体微量天平(QCM)。当质量负载,温度,压力和溶液粘度变化时,QCM测量石英晶体的频率变化。在过去的十年中,QCM已用于实时监控光刻胶材料在液体溶液中的溶解情况。该技术已适应高压系统,并针对压力和溶液粘度影响进行了校正。本文将QCM用于高压scCO_2条件下,以使用CCS / scCO_2溶液监测光刻胶的溶解动力学。记录石英晶体的频率变化,并针对压力和溶液粘度进行校正,以估计随时间变化的质量。据报道,在35℃至50℃之间的温度和3500 psi至5000 psi的压力下,CCS / scCO_2溶液中光刻胶的初始溶解速率。光致抗蚀剂的去除随时间变化的曲线是线性的,表示总去除率为零级。在0.896 g / ml的CO_2密度下用于去除光刻胶的活化能为76 mJ / mol。

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