首页> 外文会议>Advances in Resist Technology and Processing XXIII pt.2 >Linewidth Roughness Reduction at the 55 nm Node Through Combination of Classical Process Optimization and Application of Surface Conditioner Solutions
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Linewidth Roughness Reduction at the 55 nm Node Through Combination of Classical Process Optimization and Application of Surface Conditioner Solutions

机译:结合经典工艺优化和表面调节剂解决方案的应用,降低了55 nm节点的线宽粗糙度

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摘要

In this paper, the standard ASML process was optimized to reduce LineWidth Roughness (LWR) while minimizing the impact on other process performance criteria such as Depth Of Focus (DOF) and Exposure Latitude (EL). The impact of classical process optimization parameters such as post exposure bake temperature and post exposure bake time were investigated together with less often varied parameters such as hard bake temperature. These parameters were studied in conjunction with novel surface conditioners to reduce LWR. The results show that a significant reduction in the LWR number can be obtained by combining the application of a dedicated surface conditioner solution with the fine tuning of other parameters such as post exposure bake and hard bake temperature. Several process parameters had to be tuned simultaneously to retain a decent process window for the fine tuned process although some EL had to be sacrificed.
机译:在本文中,对标准ASML工艺进行了优化,以减少线宽粗糙度(LWR),同时最大程度地减少对其他工艺性能标准(如景深(DOF)和曝光度(EL))的影响。研究了经典工艺优化参数(如曝光后烘烤温度和曝光后烘烤时间)与变化不大的参数(如硬烘烤温度)的影响。这些参数与新型表面调节剂一起研究以降低LWR。结果表明,通过将专用表面调节剂溶液的应用与其他参数(如曝光后烘烤和硬烘烤温度)的微调相结合,可以显着降低LWR值。尽管必须牺牲一些EL,但必须同时调整几个过程参数以为微调过程保留一个不错的过程窗口。

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