Negative working nanomolecular resists based on fully epoxy-protected tetra-Cmethylcalixresorcinarene (epoxy C-4-R) and oxetanyl-protected tetra-methylcalixresocinarene (oxetanyl C-4-R) have been developed. They were prepared by the reaction of C-4-R with epichlorohydrin or in the presence of trimethylamine. They can be coated on the silicon wafer by spin-coating method. A clear film cast from a 20 wt% epoxy C-4-R solution in chloroform showed high transparency to UV above 300 nm. A fine negative image featuring 0.8 μm of minimum line and space patterns was observed on the film of the photoresist exposed to 40 mJ/ cm~2 of Near UV-light by the contact mode.
Advances in Resist Technology and Processing XXIII pt.2
【关键词】calix4resocinanrene;nanomolecular resists;DUV lithography;chemically amplified photoresist;