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Negative Nanomolecular Resists Based on Calix4 resocinarene

【摘要】 Negative working nanomolecular resists based on fully epoxy-protected tetra-Cmethylcalix[4]resorcinarene (epoxy C-4-R) and oxetanyl-protected tetra-methylcalix[4]resocinarene (oxetanyl C-4-R) have been developed. They were prepared by the reaction of C-4-R with epichlorohydrin or in the presence of trimethylamine. They can be coated on the silicon wafer by spin-coating method. A clear film cast from a 20 wt% epoxy C-4-R solution in chloroform showed high transparency to UV above 300 nm. A fine negative image featuring 0.8 μm of minimum line and space patterns was observed on the film of the photoresist exposed to 40 mJ/ cm~2 of Near UV-light by the contact mode.

【会议名称】 Advances in Resist Technology and Processing XXIII pt.2

【会议地点】San JoseCA(US)

【作者】 Tae-Hwan Oh; Ramakrishnan Ganesan; Je-Moon Yoon; Jin-Baek Kim;

【作者单位】 Department of Chemistry, School of Molecular Science (BK 21) Center for Advanced Functional Polymers, Korea Advanced Institute of Science Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon, 305-701, Korea;

【会议组织】

【会议召开年】 2006

【页码】P.61532G.1-61532G.10

【总页数】10

【原文格式】PDF

【正文语种】eng

【中图分类】TN304;

【原文服务方】国家工程技术数字图书馆

【关键词】calix4resocinanrene;nanomolecular resists;DUV lithography;chemically amplified photoresist;

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