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Studies of the Mechanism for Immersion Specific Defects

机译:浸入特定缺陷机理的研究

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In the past several years, ArF immersion lithography has been developed rapidly for practical applications. One of the most important topics is the elucidation of a mechanism and its solution of immersion specific defects. In this paper, we report several analytical results of immersion specific defects. First, we classify several possible origins of specific defects that are proposed based on our experiment on the actual immersion process and previous literature. We focused on a droplet of immersion water that was the origin of circular and deformed circular-type defects. Further, a watermark (WM) was created on some types of film stacks with or without the topcoat (TC) on the resist. We observed that all samples exhibited the trace of the WM. From chemical surface analyses, we obtained different types of components in the residue of the WM, which dried spontaneously. These components depended on the tested film stack. Some types were not always derived from leaching materials in the resist. Some components in the residue appeared to be airborne contaminants that were unregulated in machines used in the photolithography process. Based on the results of these tests, we discussed some methods for avoiding defects according to the droplet WM.
机译:在过去的几年中,ArF浸没式光刻技术已经迅速发展为实际应用。最重要的主题之一是阐明一种机制及其解决沉浸特定缺陷的方法。在本文中,我们报告了浸入式特定缺陷的几种分析结果。首先,我们根据实际浸入过程的实验和先前的文献对特定缺陷的几种可能来源进行了分类。我们将重点放在一滴浸入水中,这是圆形和变形的圆形缺陷的起源。此外,在某些类型的膜堆上创建了水印(WM),在抗蚀剂上有或没有面漆(TC)。我们观察到所有样品均显示出WM的痕迹。通过化学表面分析,我们在WM残留物中获得了不同类型的成分,它们会自然干燥。这些组件取决于测试的胶片叠层。某些类型并非总是源自抗蚀剂中的浸出材料。残留物中的某些成分似乎是空气传播的污染物,这些污染物在光刻工艺中使用的机器中不受管制。基于这些测试的结果,我们讨论了根据液滴WM避免缺陷的一些方法。

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