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Suppression of Phonon Sidebands in the Spectrum of Nitrogen Vacancy Centers in Diamond Nano-Crystals

机译:金刚石纳米晶体中氮空位中心频谱中声子边带的抑制

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We report the substrate effects on the zero-phonon transitions and suppression of phonon side bands in the NV center spectrum. Fluorescence spectra of NV centers in cryogenic temperatures were measured by depositing diamond nanocrystals on different substrates including glass slides, undoped Si, and silica (1~2um) on undoped Si (SiO_2/Si). We found that SiO_2/Si substrate was an effective substrate to suppress the phonon side band from spectra of NV" centers. Temperature dependence of NV- zero-phonon line Debye-Waller factor on Si and SiO2/Si were measured, from 2.5K to 230K, Debye-Waller factor decreased linearly on both of the two substrates.
机译:我们报告了底物对零声子跃迁和NV中心谱中声子边带抑制的影响。通过在不同的基板上沉积金刚石纳米晶体,包括在载玻片,未掺杂的Si和未掺杂的Si(SiO_2 / Si)上的二氧化硅(1〜2um)上,测量NV中心在低温下的荧光光谱。我们发现SiO_2 / Si衬底是抑制NV“中心光谱中声子边带的有效衬底。测量了NV-零声子线Debye-Waller因子对Si和SiO2 / Si的温度依赖性,从2.5K至230K,两个衬底上的Debye-Waller因子均线性下降。

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