Effect of Operating Conditions on the Performance of Low-High-Low P-Type GaAs Impatt Diodes

机译：工作条件对低-高-低P型GaAs阻抗二极管性能的影响

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This paper presents the results of a detailed study of the low-high-low P-type GaAs IMPATT diode. These results are analyzed and physically interpreted. Hence, a better understanding of the operation of this type of IMPATT diodes is provided. Important conclusions concerning the effects of the operating conditions on the performance of this device are drawn. These conclusions will help optimize the P-type GaAs IMPATT structure and its operating conditions.

机译：本文介绍了对低-高-低P型GaAs IMPATT二极管进行详细研究的结果。对这些结果进行了分析和物理解释。因此，提供了对该类型的IMPATT二极管的操作的更好的理解。得出了有关工作条件对设备性能的影响的重要结论。这些结论将有助于优化P型GaAs IMPATT结构及其工作条件。

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《7th World Multiconference on Systemics, Cybernetics and Informatics(SCI 2003) vol.10: Signals Processing and Optical Systems, Technologies and Applications》|2003年|253-257|共5页
会议地点 OrlandoFL(US)
作者
El-Sayed A. El-Badawy; Said H. Ibrahim;
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作者单位

Optical Society of America (OSA) High Institute of Engineering, Integrated Thebes Academy for Science, El-Maadi, Cairo 11434;

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会议组织
原文格式 PDF
正文语种 eng
中图分类计算技术、计算机技术;
关键词
LHL p-type GaAs impatt diodes; effect of operating conditions; GaAs impatt diodes;

机译：LHL p型GaAs冲击二极管；工作条件的影响； GaAs冲击二极管;

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专利

1. Performance Optimization of OSAJ P-Type Ga As IMPATT Diodes [J] . EL-SAYED A. EL-BADAWY, SAID H. IBRAHIM WSEAS Transactions on Electronics . 2008,第7a9期

机译：OSAJ P型Ga As IMPATT二极管的性能优化
2. Comparative analysis of the millimeter wave performance of diamond based IMPATT diode with that of SiC (4H) IMPATT diode [J] . Chakrabarti B., Ghosh D., Mitra M. Indian Journal of Pure & Applied Physics . 2014,第11期

机译：金刚石基IMPATT二极管与SiC（4H）IMPATT二极管的毫米波性能比较分析
3. Comparative analysis of the millimeter wave performance of diamond based IMPATT diode with that of SiC (4H) IMPATT diode [J] . Chakrabarti B, Ghosh D, Mitra M Indian Journal of Pure & Applied Physics . 2014,第11期

机译：金刚石基IMPATT二极管与SiC（4H）IMPATT二极管的毫米波性能比较分析
4. Effect of Operating Conditions on the Performance of Low-High-Low P-Type GaAs Impatt Diodes [C] . El-Sayed A. El-Badawy, Said H. Ibrahim 7th World Multiconference on Systemics, Cybernetics and Informatics(SCI 2003) vol.10: Signals Processing and Optical Systems, Technologies and Applications . 2003

机译：工作条件对低-高-低P型GaAs阻抗二极管性能的影响
5. Experimental investigation of an open resonator quasi-optical power combiner using IMPATT diodes [D] . Monahan, Gregory Paul 1995

机译：使用IMPATT二极管的开放式谐振器准光功率合成器的实验研究
6. IMPATT Diodes Based on 〈111〉 〈100〉 and 〈110〉 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows [O] . Bhadrani Banerjee, Anvita Tripathi, Adrija Das, 2015

机译：基于〈111〉〈100〉和〈110〉定向GaAs的IMPATT二极管：比较研究以寻找毫米波大气窗口的最佳方向
7. A Proposed Method for Improving the Performance of P-Type GaAs IMPATTs [O] . H. A. El-Motaafy 1970

机译：一种提高P型GaAs Impatts性能的提出方法
8. Calculation of p-Type GaAs IMPATT Admittance. [R] . Sudbury, R. W., Laton, R. W. 1974

机译：p型Gaas ImpaTT导纳的计算。

Effect of Operating Conditions on the Performance of Low-High-Low P-Type GaAs Impatt Diodes

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