Growth of Tin Oxide Film with Buffer Layer on Sapphire Substrate by Mist Chemical Vapor Deposition

摘要

The wide band-gap oxide semiconductors have attracted substantial attentions due to their physical properties and potential technological applications. Tin oxide (SnO_2) is an abundant material and usually used for transparent conducting electrodes and gas sensors. Furthermore, tin oxide can be applied to power devices because of the wide bandgap property (～4eV). In this study, we deposited SnO_2 film on buffer layers on sapphire substrates by mist chemical vapor deposition (mist-CVD).