首页> 外文会议>25th Annual BACUS Symposium on Photomask Technology pt.2 >Optimization of Alt-PSM structure for 45nm node ArF immersion lithography
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Optimization of Alt-PSM structure for 45nm node ArF immersion lithography

机译:45nm节点ArF浸没光刻法Alt-PSM结构的优化

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Alternating Aperture Phase Shifting Mask (Alt-APSM) has been expected as one of the practical techniques for 45nm node ArF lithography. We have already discussed and proposed the Single trench with undercut (UC) and bias structure is the primary candidate for 65nm node Alt-APSM structure. In fact, we have selected this structure as a standard in production for 65nm node Alt-PSM. For the 45nm node, according to the design shrinkage, mask rule such as MRC which specify minimum chrome CD between 0 and pi degree apertures and etc. is getting tighter. So, we need to consider about single trench with no undercut and bias structure. Such two types of structure are the candidates for 45nm node Alt-APSM. Exposure conditions will be considered as 0.9 or higher NA and the immersion technology as well. In this work, we will discuss about 45nm node Alt-PSM structure in terms of lithographic performance by using 3D rigorous optical simulation software. Two types of structure, single trench with UC and bias, and single trench with No UC and bias are compared. We examined the following items to find optimum Alt-PSM structure, 0/pi space bias to minimize CD difference at the wafer, quartz depth to optimize effective phase and optical proximity correction (OPC) to adjust printed line CD in through pitch condition. Wafer printing performance will be evaluated by the stability of line CD and 0-pi CD difference, contrast, NILS, phase angles, MEEF, ED-window and gate position shift.
机译:交替孔径相移掩模(Alt-APSM)已被期望作为45nm节点ArF光刻的实用技术之一。我们已经讨论并提出了带有底切(UC)和偏置结构的单沟槽是65nm节点Alt-APSM结构的主要候选对象。实际上,我们已经选择此结构作为65nm节点Alt-PSM的生产标准。对于45nm节点,根据设计收缩率,诸如MRC之类的掩模规则越来越严格,该规则规定了0至pi度孔径之间的最小铬CD。因此,我们需要考虑没有底切和偏置结构的单个沟槽。这两种类型的结构是45nm节点Alt-APSM的候选结构。曝光条件将被认为是0.9或更高的NA和浸没技术。在这项工作中,我们将使用3D严格的光学仿真软件从光刻性能方面讨论45nm节点的Alt-PSM结构。比较了两种类型的结构:具有UC和偏置的单沟槽和没有UC和偏置的单沟槽。我们检查了以下项目,以找到最佳的Alt-PSM结构,0 / pi的空间偏置以最大程度地减小晶片上的CD差异,石英深度以优化有效相位以及光学接近度校正(OPC)来调整印刷线CD在整个间距条件下。晶圆印刷性能将通过线CD和0-pi CD差异,对比度,NILS,相角,MEEF,ED窗口和浇口位置偏移的稳定性来评估。

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