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The impact of attenuated phase shift mask topography on hyper-NA lithography

机译:衰减相移掩模形貌对超NA光刻的影响

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Thin mask approximations and Kirchhoff boundary conditions for imaging calculations are justified when patterns on masks are large compared to the imaging wavelength and the thickness of absorber films were relatively small compared with the wavelength. For the future technology nodes, these assumptions will not be sufficiently accurate for simulation of attenuated phase shift masks. At very high numerical apertures and extreme off-axis illumination angles, changes in the optical path length and shadowing by the mask topography can lead to phase and amplitude deviations between the thin mask approximation and the more rigorous, full Maxwell equations approach. We have found a systematic, non-constant transmission and phase variation through pitch for low k1 imaging that is not found with the thin-mask approach. In this paper, the major impacts of attenuated phase shift mask topography in the presence of extreme off-axis illumination with numerical apertures greater than one is investigated and the contribution of mask topography to CD errors on the wafer is explored. Consideration of this new mask component to CD error budgets is needed when debating the advantages and disadvantages in a reticle magnification change.
机译:当与成像波长相比,掩模上的图案较大且与波长相比,吸收膜的厚度相对较小时,用于成像计算的薄掩模近似值和基尔霍夫边界条件是合理的。对于未来的技术节点,这些假设对于衰减相移掩模的仿真将不够准确。在很高的数值孔径和极端的偏轴照明角度下,光路长度的变化和掩模形貌的阴影会导致薄掩模近似与更严格的完整麦克斯韦方程组方法之间的相位和幅度偏差。我们已经发现,对于低k1成像而言,通过间距的系统性,非恒定传输和相位变化是薄掩模方法所没有的。在本文中,研究了在存在数值孔径大于1的极端离轴照明的情况下,衰减相移掩模形貌的主要影响,并探讨了掩模形貌对晶片上CD误差的影响。在讨论光罩倍率变化的优缺点时,需要将此新的光罩组件考虑到CD误差预算中。

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