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The Photomask Technologies in Hyper-NA Lithography

机译:超NA光刻中的光掩模技术

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This is a report of the panel discussion in PMJ 2005 on April 16, 2005. We discussed in the session on the technologies of photomask for hyper-NA lithography, with six invited panellists of two from LSI manufacturers, a lithography researcher, one from a lithography tool supplier, one from an EDA vendor and one from a photomask supplier. First, we had short presentations by the panellists on the issues brought about by hyper-NA lithography from their own technological points of view, and we knew their extensive efforts to overcome the difficulties in hyper-NA lithography. By the presentations, we had been impressed that ArF immersion technique was almost one and only promising candidate of the lithography methods which we could employ in the technology nodes of 65nm and beyond, and, that the technologies for hyper-NA lithography were then already within our hands. We discussed the difficulties inherent to hyper-NA lithography and recognized the needs of further engineering efforts to obtain maximal performance in the lithography. There were some who expressed the necessity of the change of photomask magnification because of the compatibly small features on a photomask to using wavelength in the lithography. The attendants could confirm the positions of their opinions by the insitu statistic results of the questionnaire we had had in the conference.
机译:这是2005年4月16日在PMJ 2005上进行的小组讨论的报告。我们在会议上讨论了用于超NA光刻的光掩模技术,六名受邀的小组成员来自LSI制造商,其中两名来自LSI制造商,一位是光刻研究人员,另一名来自LSI研究人员。光刻工具供应商,一位来自EDA供应商,一位来自光掩模供应商。首先,从他们自己的技术角度出发,小组成员就超NA光刻技术带来的问题做了简短的演讲,我们知道他们为克服超NA光刻技术的困难而付出的巨大努力。通过这些演讲,我们印象深刻的是,ArF浸入技术几乎是一种可以在65nm及以上工艺节点中使用的光刻方法,并且是唯一有前途的候选方法,并且那时超NA光刻技术已经在内部我们的手。我们讨论了超NA光刻技术固有的困难,并认识到需要进一步的工程工作以在光刻技术中获得最大性能的需求。有些人表示有必要改变光掩模的放大倍数,因为光掩模上的小特征与光刻中使用波长相当。与会者可以通过我们在会议中获得的调查问卷的现场统计结果来确认其意见立场。

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