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Photomasks Registration Specification and Its impact on FLASH Memory Devices

机译:光掩模注册规范及其对闪存设备的影响

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With photolithography being pushed to its limits, semiconductor device performance is becoming increasingly more sensitive to lithographic variations. More advanced lithography tools, metrology and photomasks are helping address issues like minimum feature size, tight CD control, and limited process windows. Mask registration is becoming even more important in the low k_1 regime, where overlay can have a huge impact on the overall device performance and drive the error budget into unsatisfactory compromises. FLASH memory technology requires a tighter overlay control compared to logic devices. Charge retention and programming performance are particularly sensitive to overlay. In this paper, we analyze the impact of photomask registration on NOR FLASH memory fabrication using Exploratory Data Analysis approach.
机译:随着光刻技术的发展,半导体器件的性能对光刻技术的变化越来越敏感。更加先进的光刻工具,计量学和光掩模正在帮助解决诸如最小特征尺寸,严格的CD控制和有限的处理窗口之类的问题。在低k_1的情况下,掩码注册变得越来越重要,在这种情况下,覆盖可能会对整体设备性能产生巨大影响,并使错误预算陷入无法令人满意的折中。与逻辑器件相比,闪存技术需要更严格的覆盖控制。电荷保持和编程性能对覆盖特别敏感。在本文中,我们使用探索性数据分析方法分析了光掩模配准对NOR FLASH存储器制造的影响。

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