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【6h】 Real-World Impact of Inverse Lithography Technology

【摘要】In this paper we describe, from the user's point of view, how Inverse Lithography Technology (ILT) differs from Optical Proximity Correction (OPC). We show simulation and experimental results from 90nm and 65nm semiconductor nodes, comparing ILT-generated masks and OPC-generated masks for real-life layouts, in a production environment. In addition, we discuss issues related to complexity and manufacturability of ILT-generated masks.

【会议名称】 Annual BACUS Symposium on Photomask Technology pt.1; 20051004-07; Monterey,CA(US)

【会议地点】Monterey,CA(US)

【作者】Jonathan Ho;Yan Wang;Xin Wu;Wolfgang Leitermann;Benjamin Lin;Ming Feng Shieh;Jie-wei Sun;Orson Lin;Jason Lin;Yong Liu;Linyong Pang;

【作者单位】Xilinx Inc., USA;

【会议组织】

【会议召开年】2005

【页码】P.59921Z.1-59921Z.8

【总页数】8

【原文格式】PDF

【正文语种】eng

【中图分类】TN305.7;

【关键词】inverse lithography technology (ILT);OPC;RET;lithography;

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