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【6h】 Pattern type specific modeling and correction methodology at high NA and off-axis illumination

【摘要】In this work, a potential drawback of simultaneously representing a set of data that contains line-ends, isobar, block structure, and pitch linearity intensity signal using a single representative model have been resolved. In a typical model OPC procedure, a set of pattern data representative of OPC layout is calibrated using a single representative model, and this model may be a scalar or a vector at constant threshold or variable threshold. Nevertheless, traditional methodology treats a set of pattern data as a whole believing that it provides a best representation of a more complicated environment. In this study, pattern type specific models are used to perform optical proximity correction. This multi-model approach distinguishes each pattern type and specified pitch range a priori to obtaining intensity signal by checking for neighboring segment. Based on this search result, its segment is classified into a pattern type and subgroup, and then, pattern specific models are applied. This approach provides improved calibration result for strong off-axis illumination and optical proximity correction result which will be difficult to achieve with a single representative model.

【会议名称】 Annual BACUS Symposium on Photomask Technology pt.1; 20051004-07; Monterey,CA(US)

【会议地点】Monterey,CA(US)

【作者】Sungsoo Suh;Young-seog Kang;In-sung Kim;Sang-gyun Woo;Hanku Cho;Joo-tae Moon;

【作者单位】Samsung Electronics Co., Ltd., Semiconductor Business, Memory Division, Process Development Team, San #24 Nongseo-Ri, Giheung-Eup, Yong-in City, Gyonggi-Do, Korea 449-711;

【会议组织】

【会议召开年】2005

【页码】P.599220.1-599220.8

【总页数】8

【原文格式】PDF

【正文语种】eng

【中图分类】TN305.7;

【关键词】lithography;optical proximity correction;model OPC;OPC verification;

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