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【6h】 Pattern Fidelity Performance from Next-Generation DUV Laser Lithography on 65nm Masks and Wafers

【摘要】Currently, the ALTA® 4300 generation Deep Ultra-Violet (DUV) Laser tool is capable of printing critical and semi-critical photomasks for the 130nm and 90nm IC technology nodes. With improved optical elements, an improved objective lens, and a higher bandwidth datapath the capability of the tool has been dramatically enhanced. Both the tools diffractive optic element (DOE) and acousto-optic modulator (AOM) have been refined. Additionally, the tools 33x, 0.8NA objective lens has been replaced with a 42x, 0.9NA objective lens. Finally, the tools datapath enhancement has allowed critical level write times to remain less than four hours. Quantitative results of these enhancements will be detailed through reporting of critical feature resolution limits, CD uniformity control, and pattern placement accuracy on mask. Performance will be shown from masks printed pre- and post- hardware upgrade. Experimental results will show actual improvements. In this paper details of the aerial image created when printing wafers with DUV Laser generated photomasks pre- and post- upgrade will be shown. Both 248nm and 193nm source printing with multiple illumination conditions will be discussed. Details of a print test comparison performed on photomasks from each tool configuration will be documented. The print test comparison will include process window characterization from each mask type. A study of the inspectability of the DUV Laser generated photomasks will also be highlighted.

【会议名称】 Annual BACUS Symposium on Photomask Technology pt.1; 20051004-07; Monterey,CA(US)

【会议地点】Monterey,CA(US)

【作者】Robert Kiefer;Peter Buck;Vishal Garg;Jason Hickethier;Curt Jackson;John Manfredo;Cris Morgante;Paul Allen;Michael White;

【作者单位】Research & Development Group, Toppan Photomasks, Inc. 400 Texas Avenue, Round Rock, TX 78664;

【会议组织】

【会议召开年】2005

【页码】P.59920U.1-59920U.12

【总页数】12

【原文格式】PDF

【正文语种】eng

【中图分类】TN305.7;

【关键词】CD uniformity;DUV;mask pattern generation system;multi-beam;OPC;pattern fidelity;

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