Effect of mask pattern fidelity on 193 nm lithography performance

摘要

As device technology shrinks beyond 0.13um, extensive resolution enhancement techniques such as PSM and OPC are employed in an attempt to gain usable photo process windows. Pattern fidelity on a mask measured in terms of corner rounding and line end shortening significantly influences the expected wafer performance. In this work, we report the effects of mask making parameters on the mask pattern fidelity and the resulting wafer pattern fidelity.